Radiation evaluation of an advanced 64Mb 3.3 V DRAM and insights into the effects of scaling on radiation hardness

Journal Article · Fri Dec 01 00:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.488765· OSTI ID:203688

Shaw, D C; Swift, G M; Johnston, A H ^[1]

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1. California Inst. of Tech., Pasadena, CA (United States). Jet Propulsion Lab.

In this paper, total ionizing dose radiation evaluations of the Micron 64 Mb 3.3 V, fast page mode DRAM and the IBM LUNA-ES 16 Mb DRAM are presented. The effects of scaling on total ionizing dose radiation hardness are studied utilizing test structures and a series of 16 Mb DRAMs with different feature sizes from the same manufacturing line. General agreement was found between the threshold voltage shifts of 16 Mb DRAM test structures and the threshold voltage measured on complete circuits using retention time measurements. Retention time measurement data from early radiation doses are shown that allow internal failure modes to be distinguished.

• OSTI ID: 203688
• Report Number(s): CONF-950716-; ISSN 0018-9499; TRN: 96:009647
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 42, Issue 6Pt1; Conference: 32. annual IEEE international nuclear and space radiation effects conference, Madison, WI (United States), 17-21 Jul 1995; Other Information: PBD: Dec 1995
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
SEMICONDUCTOR STORAGE DEVICES
RADIATION HARDENING
EXPERIMENTAL DATA
ELECTRIC POTENTIAL
PERFORMANCE
DIAGNOSTIC TECHNIQUES
IONIZING RADIATIONS