Growth and physical properties of epitaxial metastable cubic TaN(001)
- Department of Materials Science, the Materials Research Laboratory, and the Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
- Department of Mechanical Engineering, Linkoeping University, S-581 83 Linkoeping, (Sweden)
We report the growth of epitaxial metastable B1 NaCl structure TaN(001) layers. The films were grown on MgO(001) at 600 degree sign C by ultrahigh vacuum reactive magnetron sputter deposition in mixed Ar/N{sub 2} discharges maintained at 20 mTorr (2.67 Pa). X-ray diffraction and transmission electron microscopy results establish the epitaxial relationship as cube-on-cube, (001){sub TaN}(parallel sign)(001){sub MgO} with [100]{sub TaN}(parallel sign)[100]{sub MgO}, while Rutherford backscattering spectroscopy shows that the layers are overstoichiometric with N/Ta=1.22{+-}0.02. The room-temperature resistivity is 225 {mu}{omega} cm with a small negative temperature dependence between 20 and 400 K. The hardness and elastic modulus, as determined by nanoindentation measurements, are 30.8{+-}0.9 and 457{+-}16 GPa, respectively. (c) 1999 American Institute of Physics.
- OSTI ID:
- 20217868
- Journal Information:
- Applied Physics Letters, Vol. 75, Issue 24; Other Information: PBD: 13 Dec 1999; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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