Thermal expansion of Ti{sub 5}Si{sub 3} with Ge, B, C, N, or O additions
- Ames Laboratory and Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011 (United States)
The crystallographic thermal expansion coefficients of Ti{sub 5}Si{sub 3} from 20 to 1000 degree sign C as a function of B, C, N, O, or Ge content were measured by high-temperature x-ray diffraction using synchrotron sources at Cornell University (Cornell High Energy Synchrotron Source; CHESS) and Argonne National Laboratory (Advanced Photon Source; APS). Whereas the ratio of the thermal expansion coefficients along the c and a axes was approximately 3 for pure Ti{sub 5}Si{sub 3}, this ratio decreased to about 2 when B, C, or N atoms were added. Additions of O and Ge were less efficient at reducing this thermal expansion anisotropy. The extent by which the thermal expansion was changed when B, C, N, or O atoms were added to Ti{sub 5}Si{sub 3} correlated with their expected effect on bonding in Ti{sub 5}Si{sub 3}. (c) 2000 Materials Research Society.
- OSTI ID:
- 20217682
- Journal Information:
- Journal of Materials Research, Vol. 15, Issue 8; Other Information: PBD: Aug 2000; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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