Effect of nitrogen on the electronic band structure of group III-N-V alloys
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
- Hewlett Packard Laboratories, Palo Alto, California 94304 (United States)
We have studied optical transitions at the {gamma} and L points of the Brillouin zone of GaN{sub x}As{sub 1-x} and Al{sub y}Ga{sub 1-y}N{sub x}As{sub 1-x} alloys using photomodulation spectroscopy. For GaN{sub x}As{sub 1-x} with N contents between 0% and 2%, the N-induced shift of the conduction-band L minima is found to be only a fraction of the conduction-band edge shift at the {gamma} point. The measurements of Al{sub y}Ga{sub 1-y}N{sub x}As{sub 1-x} further show that there is no correlation between the location of the X conduction-band minima and the observed E{sub +} and E{sub -} transitions. The results demonstrate that the N-induced interactions between extended {gamma}, L, and X conduction-band states do not play a significant role in modification of the conduction-band structure of III-N-V alloys. The N-induced change of the conduction-band structure is predominantly influenced by the anticrossing interaction between the extended states of the {gamma} conduction band and the localized states of nitrogen. (c) 2000 The American Physical Society.
- OSTI ID:
- 20217356
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 62, Issue 7; Other Information: PBD: 15 Aug 2000; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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