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Title: The microstructure of continuously processed YBa{sub 2}Cu{sub 3}O{sub y} coated conductors with underlying CeO{sub 2} and ion-beam-assisted yttria-stabilized zirconia buffer layers

Journal Article · · Journal of Materials Research
DOI:https://doi.org/10.1557/JMR.2000.0158· OSTI ID:20216862

The microstructural development of YBa{sub 2}Cu{sub 3}O{sub y} (Y-123) coated conductors based on the ion-beam-assisted deposition (IBAD) of yttria-stabilized zirconia (YSZ) to produce a biaxially textured template is presented. The architecture of the conductors was Y-123/CeO{sub 2}/IBAD YSZ/Inconel 625. A continuous and passivating Cr{sub 2}O{sub 3} layer forms between the YSZ layer and the Inconel substrate. CeO{sub 2} and Y-123 are closely lattice-matched, and misfit strain is accommodated at the YSZ/CeO{sub 2} interface. Localized reactions between the Y-123 film and the CeO{sub 2} buffer layer result in the formation of BaCeO{sub 3}, YCuO{sub 2}, and CuO. The positive volume change that occurs from the interfacial reaction may act as a kinetic barrier that limits the extent of the reaction. Excess copper and yttrium generated by the interfacial reaction appear to diffuse along grain boundaries and intercalate into Y-123 grains as single layers of the Y-247, Y-248, or Y-224 phases. The interfacial reactions do not preclude the attainment of high critical currents (I{sub c}) and current densities (J{sub c}) in these films nor do they affect to any appreciable extent the nucleation and alignment of the Y-123 film. (c) 2000 Materials Research Society.

OSTI ID:
20216862
Journal Information:
Journal of Materials Research, Vol. 15, Issue 5; Other Information: PBD: May 2000; ISSN 0884-2914
Country of Publication:
United States
Language:
English