Magnetic excitations in tetragonal HoCr{sub 2}Si{sub 2}
- INFM, Dipartimento di Fisica, Universita di Modena e Reggio Emilia, Via G. Campi 213/a, Modena, 41100, (Italy)
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60436-4845 (United States)
- Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat. 65, 1018 XE, Amsterdam, The Netherlands (Netherlands)
Magnetic excitations in tetragonal HoCr{sub 2}Si{sub 2} have been measured by neutron spectroscopy. The temperature and Q dependence of the excitations measured at 8 K confirm that they can be attributed to crystal field (CF) dipolar transitions experienced by the Ho ion. The analysis of the neutron spectroscopy data for HoCr{sub 2}Si{sub 2} is simplified by the fact that the CF coefficients have already been determined for the series RX{sub 2}Si{sub 2} (R=rare earth, X=Cu, Ni) by neutron spectroscopy. In addition, electronic band structure calculations and experimental determinations of the electric field gradient for numerous compounds of the type RT{sub 2}Si{sub 2} (T=Cr, Cu, Ni) show that the first-order CF coefficient, A{sub 2}{sup 0}, changes sign when passing from the series RX{sub 2}Si{sub 2} (X=Cr, Ni) to RCu{sub 2}Si{sub 2}. In the light of this information, the available neutron spectroscopy data for HoCr{sub 2}Si{sub 2} are presented and discussed. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20216268
- Journal Information:
- Journal of Applied Physics, Vol. 87, Issue 9; Other Information: PBD: 1 May 2000; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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