InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

Journal Article · Mon May 08 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126476· OSTI ID:20216186

Chang, P C ^[1]; Baca, A G ^[1]; Li, N Y ^[2]; Sharps, P R ^[2]; Hou, H Q ^[2]; Laroche, J R ^[3]; Ren, F ^[3]

---

1. Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)
2. Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)
3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)

We have demonstrated a functional P-n-p heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic-vapor-phase-epitaxy-grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} HBT takes advantage of the narrower band gap energy (E{sub g}=1.2 eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}, which is lattice matched to GaAs. Compared with the Al{sub 0.3}Ga{sub 0.7}As/GaAs material system, the Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} material system has a larger conduction-band offset, while the valence-band offset remains comparable. This characteristic band alignment is very suitable for P-n-p HBT applications. The device's peak current gain is 23, and it has a turn-on voltage of 0.77 V, which is 0.25 V lower than in a comparable P-n-p Al{sub 0.3}Ga{sub 0.7}As/GaAs HBT. (c) 2000 American Institute of Physics.

• OSTI ID: 20216186
• Journal Information: Applied Physics Letters, Vol. 76, Issue 19; Other Information: PBD: 8 May 2000; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
INDIUM NITRIDES
JUNCTION TRANSISTORS
VAPOR PHASE EPITAXY
ENERGY GAP
EXPERIMENTAL DATA