Kondo physics in the single-electron transistor with ac driving
Abstract
Using a time-dependent Anderson Hamiltonian, a quantum dot with an ac voltage applied to a nearby gate is investigated. A rich dependence of the linear response conductance on the external frequency and driving amplitude is demonstrated. At low frequencies a sufficiently strong ac potential produces sidebands of the Kondo peak in the spectral density of the dot, and a slow, roughly logarithmic decrease in conductance over several decades of frequency. At intermediate frequencies, the conductance of the dot displays an oscillatory behavior due to the appearance of Kondo resonances of the satellites of the dot level. At high frequencies, the conductance of the dot can vary rapidly due to the interplay between photon-assisted tunneling and the Kondo resonance. (c) 2000 The American Physical Society.
- Authors:
-
- Department of Physics and Rice Quantum Institute, Rice University, Houston, Texas 77251-1892 (United States)
- NEC Research Institute, 4 Independence Way, Princeton, New Jersey 08540 (United States)
- Physics Department, Ben Gurion University, Beer Sheva, 84105, (Israel)
- Center for Materials Theory, Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019 (United States)
- Publication Date:
- OSTI Identifier:
- 20215223
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 61; Journal Issue: 3; Other Information: PBD: 15 Jan 2000; Journal ID: ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; TRANSISTORS; KONDO EFFECT; SEMICONDUCTOR JUNCTIONS; HAMILTONIANS; ELECTRIC CONDUCTIVITY; FREQUENCY DEPENDENCE; TUNNEL EFFECT; THEORETICAL DATA
Citation Formats
Nordlander, Peter, Wingreen, Ned S, Meir, Yigal, and Langreth, David C. Kondo physics in the single-electron transistor with ac driving. United States: N. p., 2000.
Web. doi:10.1103/PhysRevB.61.2146.
Nordlander, Peter, Wingreen, Ned S, Meir, Yigal, & Langreth, David C. Kondo physics in the single-electron transistor with ac driving. United States. https://doi.org/10.1103/PhysRevB.61.2146
Nordlander, Peter, Wingreen, Ned S, Meir, Yigal, and Langreth, David C. 2000.
"Kondo physics in the single-electron transistor with ac driving". United States. https://doi.org/10.1103/PhysRevB.61.2146.
@article{osti_20215223,
title = {Kondo physics in the single-electron transistor with ac driving},
author = {Nordlander, Peter and Wingreen, Ned S and Meir, Yigal and Langreth, David C},
abstractNote = {Using a time-dependent Anderson Hamiltonian, a quantum dot with an ac voltage applied to a nearby gate is investigated. A rich dependence of the linear response conductance on the external frequency and driving amplitude is demonstrated. At low frequencies a sufficiently strong ac potential produces sidebands of the Kondo peak in the spectral density of the dot, and a slow, roughly logarithmic decrease in conductance over several decades of frequency. At intermediate frequencies, the conductance of the dot displays an oscillatory behavior due to the appearance of Kondo resonances of the satellites of the dot level. At high frequencies, the conductance of the dot can vary rapidly due to the interplay between photon-assisted tunneling and the Kondo resonance. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevB.61.2146},
url = {https://www.osti.gov/biblio/20215223},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 3,
volume = 61,
place = {United States},
year = {Sat Jan 15 00:00:00 EST 2000},
month = {Sat Jan 15 00:00:00 EST 2000}
}