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Title: Comparison of the k{center_dot}p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots

Comparison of the k{center_dot}p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots We present a comparison of the 8-band k{center_dot}p and empirical pseudopotential approaches to describing the electronic structure of pyramidal InAs/GaAs self-assembled quantum dots. We find a generally good agreement between the two methods. The most significant differences found in the k(centre dot)p calculation are (i) a reduced splitting of the electron p states (3 vs 24 meV), (ii) an incorrect in-plane polarization ratio for electron-hole dipole transitions (0.97 vs 1.24), and (iii) an over confinement of both electron (48 meV) and hole states (52 meV), resulting in a band gap error of 100 meV. We introduce a ''linear combination of bulk bands'' technique which produces results similar to a full direct diagonalization pseudopotential calculation, at a cost similar to the k{center_dot}p method. (c) 2000 American Institute of Physics.
Authors: ; ; ; ;
Publication Date:
OSTI Identifier:20215037
Resource Type:Journal Article
Data Type:
Resource Relation:Journal Name: Applied Physics Letters; Journal Volume: 76; Journal Issue: 3; Other Information: PBD: 17 Jan 2000
Country of Publication:United States
Language:English
Subject: 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; ELECTRONIC STRUCTURE; SEMICONDUCTOR JUNCTIONS; ENERGY GAP; EFFECTIVE MASS; POLARIZATION; THEORETICAL DATA