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Title: The effects of hydrogen dilution on Voc in a-Si:H pin solar cells

Conference ·
OSTI ID:20085560

The authors study the effects of hydrogen dilution on the open circuit voltage of a-Si:H pin solar cells fabricated by rf glow discharge growth. They keep the p and n layers the same and only vary the i-layer properties. A normal a-Si:H i-layer, an H-diluted i-layer, and a thin H-diluted layer inserted between p and normal i layer are selected for this study. They measure the JV characteristics and the internal electric field distribution using a transient-null-current technique both in annealed and light soaked states. They find that hydrogen dilution does stabilize the Voc either in a bulk H-diluted i layer or in a thin layer between p and normal i layer after 100 hours Am1 sun light soaking. From dark IV measurement, both H-diluted cells show little change in current at voltage near Voc before and after light soaking; while the normal a-Si:H cell does show a noticeable change. Also the internal field measurements find a stronger electric field starting from p and i interface for both H-diluted cells compared to the normal a-Si:H cell. Furthermore, there are no measurable changes in the field profiles after 100 hour AM1 light-soaking for both H-diluted and normal a-Si cells. All these suggest that hydrogen dilution increases the field strength near p and i interface, which is the key that leads to a more stable Voc of H-diluted cells.

Research Organization:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
20085560
Resource Relation:
Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
Country of Publication:
United States
Language:
English