Photoconductivity and density of states in microstructural amorphous silicon
It has been reported in previous works that using of RF 55 kHz PECVD method allows to deposit microstructural inhomogeneous a-Si:H films at high deposition rate (10--20{angstrom}/c) and with high photoconductivity. The structural analysis with using of IR spectroscopy and atomic force microscopy (AFM) performed in this work have shown that these films possess a relatively regular microstructure consisting of grains with characteristic size of {approximately}300--500{angstrom}. The regular microstructure of investigated films differs from inhomogeneous a-Si:H with deteriorate electronic properties. At the same time the diffraction analysis didn't reveal the presence of microcrystals. Therefore, the authors denoted their films as microstructural a-Si:H films. In this work they performed the modeling of the photoconductivity of microstructural a-Si:H films to analyze the density-of-states (DOS) responsible for recombination kinetics. For this purpose different approaches to photoconductivity modeling have been used to simulate the experimentally measured temperature dependence of photoconductivity. The comparative analysis of results of these simulations and ESR measurements have shown that recombination in high photoconductive microstructural films is controlled by deep neutral states.
- Research Organization:
- Moscow Inst. of Electronic Technology (RU)
- OSTI ID:
- 20085489
- Resource Relation:
- Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced chemical vapor deposition
Preparation of hydrogenated amorphous silicon and its characterization by transient photoconductivity