Numerical simulation of the transient photoconductivity in a-Si:H as a function of excitation density
The dependence of the transient photoconductivity induced by pulsed excitation (TPC) on the excitation density is discussed with the help of numerical simulations. It is shown that recombination between excess mobile electrons and all excess holes (mainly localized) can explain the excitation density dependence of the TPC amplitude of standard a-Si:H at room temperature using a rate parameter k{sub BB} of 10{sup {minus}8} cm{sup 3}/s. This model leads to a decay faster than experimentally observed in the time range from 40 ns to 1 {micro}s. A variation of the recombination model is presented that gives short time range. Moreover comparison of the simulations with experimental data yields limits for the parameters of the conduction band tail. In particular, the time necessary to establish a dynamic equilibrium of excess electrons between delocalized states in the conduction band and localized states in the tail appears to be very informative.
- Research Organization:
- Hahn-Meitner-Inst., Berlin (DE)
- OSTI ID:
- 20085487
- Resource Relation:
- Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
- Country of Publication:
- United States
- Language:
- English
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