Fluctuating defect density probed with noise spectroscopy in hydrogenated amorphous silicon
Abstract
Resistance fluctuations have been studied in hydrogenated amorphous silicon in the temperature range between 300 K and 450 K. The primary noise source has a power spectrum of approximately 1/f and is ascribed to hydrogen motion. Hopping of weakly bound hydrogen is thermally activated at such low temperatures with an average activation energy of 0.85 eV. The attempt rate amounts to 7 {center_dot} 10{sup 12} s{sup {minus}1}.
- Authors:
- Publication Date:
- Research Org.:
- Univ. of Utrecht (NL)
- OSTI Identifier:
- 20085486
- Resource Type:
- Conference
- Resource Relation:
- Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; AMORPHOUS STATE; SILICON; HYDROGEN ADDITIONS; ELECTRIC CONDUCTIVITY; CRYSTAL DEFECTS; CHEMICAL BONDS; CHARGE CARRIERS; TRAPPING
Citation Formats
Verleg, P A.W.E., Uca, O, and Dijkhuis, J I. Fluctuating defect density probed with noise spectroscopy in hydrogenated amorphous silicon. United States: N. p., 1997.
Web.
Verleg, P A.W.E., Uca, O, & Dijkhuis, J I. Fluctuating defect density probed with noise spectroscopy in hydrogenated amorphous silicon. United States.
Verleg, P A.W.E., Uca, O, and Dijkhuis, J I. 1997.
"Fluctuating defect density probed with noise spectroscopy in hydrogenated amorphous silicon". United States.
@article{osti_20085486,
title = {Fluctuating defect density probed with noise spectroscopy in hydrogenated amorphous silicon},
author = {Verleg, P A.W.E. and Uca, O and Dijkhuis, J I},
abstractNote = {Resistance fluctuations have been studied in hydrogenated amorphous silicon in the temperature range between 300 K and 450 K. The primary noise source has a power spectrum of approximately 1/f and is ascribed to hydrogen motion. Hopping of weakly bound hydrogen is thermally activated at such low temperatures with an average activation energy of 0.85 eV. The attempt rate amounts to 7 {center_dot} 10{sup 12} s{sup {minus}1}.},
doi = {},
url = {https://www.osti.gov/biblio/20085486},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 01 00:00:00 EDT 1997},
month = {Tue Jul 01 00:00:00 EDT 1997}
}
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