On the compensation mechanism of amorphous silicon films: Study of stability
The authors investigated a-Si:H compensated materials deposited over a wide range of gas dopant concentrations, from 0.125 ppm up to 10{sup 3} ppm. They achieved compensation for different ratio in the gas phase of diborane and phosphine, depending on their concentration. As a relevant result, they found that at constant boron concentration compensation occurs by using two different values of phosphine flow. This behavior can be described by a change of formation mechanism involving active dopants, defects and boron-phosphorus complex, that occurs in a different way depending on the dopant concentrations. The two compensation regimes are evidenced also by a different behavior under light soaking. Furthermore they found that photocurrent evolution under illumination is determined by two concurrent mechanisms: activation of dopant species and increase of defect density.
- Research Organization:
- Dept. of Electronic Engineering, Roma (IT)
- OSTI ID:
- 20085466
- Resource Relation:
- Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
- Country of Publication:
- United States
- Language:
- English
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