25.5% efficient Ga{sub 0.35}In{sub 0.65}P/Ga{sub 0.83}In{sub 0.17}As tandem solar cells grown on GaAs substrates

Journal Article · Mon May 01 00:00:00 EDT 2000 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/55.841298· OSTI ID:20067759

Dimroth, F; Schubert, U; Bett, A W

Theoretical calculations predict a higher power conversion efficiency for the combination of Ga{sub 0.35}In{sub 0.65}P and Ga{sub 0.83}In{sub 0.17}As in a tandem solar cell, compared to the more commonly used Ga{sub 0.51}In{sub 0.49}P/GaAs approach. A record conversion efficiency of 21.6% (AM1.5g) was recently achieved for a 1.18 eV Ga{sub 0.83}In{sub 0.17}As solar cell, grown lattice-mismatched to the GaAs substrate material. This paper reports on the device characteristics of first Ga{sub 0.35}In{sub 0.65}P/Ga{sub 0.83}In{sub 0.17}As tandem solar cells based on this very promising GaInAs material. A high quantum efficiency, comparable to the lattice-matched Ga{sub 0.51}In{sub 0.49}P on GaAs approach was achieved. A power conversion efficiency of 25.5% was measured under AM1.5d spectral conditions.

• Research Organization: Fraunhofer Inst. for Solar Energy Systems ISE, Freiburg (DE)
• OSTI ID: 20067759
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers), Vol. 21, Issue 5; Other Information: PBD: May 2000; ISSN 0741-3106
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
QUANTUM EFFICIENCY
GALLIUM ARSENIDE SOLAR CELLS
INDIUM ARSENIDES
GALLIUM ARSENIDES
FABRICATION
GALLIUM PHOSPHIDE SOLAR CELLS
INDIUM PHOSPHIDE SOLAR CELLS