Threshold LET for SEU induced by low energy ions

Journal Article · Wed Dec 01 00:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819095· OSTI ID:20014687

McNulty, P J; Roche, P; Palau, J M; Gasiot, J

Simulations to determine the threshold LET as a function of the length of the ion track are consistent with there being two regions of charge collection. In the top layer which contains the depletion region all the charge generated is collected in time to upset the device. In the next layer, 10% to 20% of the charge generated is collected and contributes to upsetting the device. This second layer of partial charge collection may significantly impact the accuracy of SEU predictions involving low-energy neutrons and protons. A simple method of including this contribution in calculations is proposed.

• Research Organization: Univ. Montpellier II (FR)
• OSTI ID: 20014687
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Vol. 46, Issue 6Pt1; Conference: 1999 IEEE Nuclear and Space Radiation Effects Conference, Norfolk, VA (US), 07/12/1999--07/16/1999; Other Information: PBD: Dec 1999; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
LET
FAILURES
PHYSICAL RADIATION EFFECTS
HEAVY IONS
CHARGE COLLECTION
MATHEMATICAL MODELS