An improved procedure for preparing epitaxial Tl-2201 films on single crystals of LaAlO{sub 3} and SrTiO{sub 3}
Epitaxial Tl-2201 films are prepared on single crystal LaAlO{sub 3} and SrTiO{sub 3} by thallization of thallium-free precursor films made by laser ablation. Thallization is carried out in two consecutive steps. In the first step, at 720 C, a smooth and epitaxial film is produced. The second thallization, at 820 C, improved film crystallinity and the {Tc}. The films were characterized by X-ray diffraction and by resistance and susceptibility measurements. For a film on single crystal LaAlO{sub 3}, the FWHM of the {Omega} scan (0,0,10) was 0.27{degree}. {Tc} was 84K while J{sub c} reached 1.6x10{sup 6} A/ cm{sup 2} at 77K. A film on single crystal SrTiO{sub 3} exhibited somewhat lower {Tc} (78 K) wile J{sub c} was much smaller (9.5 x 10{sup 3} A/cm{sup 2} at 70.4K).
- Research Organization:
- Chalmers Univ. of Tech. and Univ. of Goeteborg (SE)
- OSTI ID:
- 20012853
- Journal Information:
- Journal of Low Temperature Physics, Vol. 117, Issue 3-4; Conference: International Conference on Physics and Chemistry of Molecular and Oxide Superconductors, MOS'99, Stockholm (SE), 07/28/1999--08/02/1999; Other Information: PBD: Nov 1999; ISSN 0022-2291
- Country of Publication:
- United States
- Language:
- English
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