Thermal resistance of VCSEL's bonded to integrated circuits

Journal Article · Wed Dec 01 00:00:00 EST 1999 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/68.806844· OSTI ID:20005642

Pu, R; Wilmsen, C W; Geib, K M; Choquette, K D

The thermal resistance of vertical-cavity surface-emitting lasers (VCSEL's) flip chip bonded to GaAs substrates and CMOS integrated circuits has been measured. The measurements on GaAs show that if the bonding is done properly, the bonding does not add significantly to the thermal resistance. However, the SiO{sub 2} under the CMOS bonding pad can double the thermal resistance unless measures are taken to improve the thermal conductance of these layers. Finite element simulations indicate that the thermal resistance of bonded VCSEL's increases rapidly as the solder bond size and the aperture size decrease below {approximately}10 {micro}m.

• Research Organization: Colorado State Univ., Fort Collins, CO (US)
• Sponsoring Organization: National Science Foundation (NSF)
• OSTI ID: 20005642
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers), Vol. 11, Issue 12; Other Information: PBD: Dec 1999; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
THERMAL CONDUCTIVITY
GALLIUM ARSENIDES
SUBSTRATES
INTEGRATED CIRCUITS
LAYERS
FINITE ELEMENT METHOD
BONDING