Properties of conducting In-S-O films, prepared from volatile complex compound
- Inst. of Inorganic Chemistry, Novosibirsk (Russian Federation)
Described in the work is a two-stage process of the fabrication of indium oxide films, consisting in a preliminary synthesis of indium sulphide and its subsequent oxidation. Films of In{sub 2}S{sub 3} were prepared by the method of gas phase deposition from the volatile complex compound indium(III) isopropylxanthate. The crystal structure and electrical characteristics of the In{sub 2}S{sub 3} films were studied when the temperature of the synthesis was varied in the 230--450 C range. According to the X-ray phase analysis of the indium sulphide films, they were polycrystalline with cubic ({alpha}-phase) or tetragonal ({beta}-phase) structure. They were oriented with the {alpha}[111] direction perpendicular to the glass substrate for the whole interval of the synthesis temperatures. The In{sub 2}S{sub 3} films turned into cubic In{sub 2}O{sub 3} after annealing in the presence of oxygen. It was shown by Auger analysis that annealed samples were indium oxide films with a small admixture of sulphur. The electrical resistance was measured in situ, during the oxidation process. The specific electrical resistance of indium sulphide films varied from 0.1 to 500 Ohm.cm depending on the temperature of the synthesis. The electrical characteristics of the films were connected with the properties of the starting In{sub 2}S{sub 3} films. The lowest values of specific resistivity (p{approx_equal}1.10{sup {minus}2} Ohm.cm) for In{sub 2}O{sub 3}:S films were attained by the oxidation of In{sub 2}S{sub 3} films synthesized at T > 370C.
- OSTI ID:
- 197638
- Report Number(s):
- CONF-950793-; ISBN 0-8194-1890-0; TRN: IM9612%%412
- Resource Relation:
- Conference: 40. annual meeting of the Society of Photo-Optical Instrumentation Engineers, San Diego, CA (United States), 9-14 Jul 1995; Other Information: PBD: 1995; Related Information: Is Part Of Optical materials technology for energy efficiency and solar energy conversion XIV; Lampert, C.M. [ed.] [Lawrence Berkeley Lab., CA (United States). Energy and Environment Div.]; Deb, S.K. [ed.] [National Renewable Energy Lab., Golden, CO (United States)]; Grandqvist, C.G. [ed.] [Uppsala Univ. (Sweden). Dept. of Technology]; PB: 379 p.; Proceedings/SPIE, Volume 2531
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electronic Conductivity of Nanoporous Indium Oxide Derived from Sequential Infiltration Synthesis
A NOTE ON TRANSFORMATIONS IN METALLIC CERIUM