Electrochemical characterization of InP and GaAs based structures for space solar cell applications

Book · Sat Dec 31 00:00:00 EST 1994

OSTI ID:191121

Faur, M; Flood, D J; Jenkins, P P; Wilt, D M ^[1]; Faur, M; Goradia, M ^[2]

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1. National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
2. Cleveland State Univ., OH (United States)

In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on InP and GaAs, using a newly developed electrolyte based on HF, CH{sub 3}COOH, o-H{sub 3}PO{sub 4}, C{sub 9}H{sub 14}ClN and NH{sub 3}F{sub 2}. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided.

• OSTI ID: 191121
• Report Number(s): CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9610%%122
• Resource Relation: Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty-fourth IEEE photovoltaic specialists conference -- 1994. Volume 2; PB: 1268 p.
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
INDIUM PHOSPHIDE SOLAR CELLS
CARRIER DENSITY
GALLIUM ARSENIDE SOLAR CELLS
SILICON
GERMANIUM
INDIUM ARSENIDES
GALLIUM PHOSPHIDES
ELECTROCHEMISTRY
ELECTROLYTES
HYDROFLUORIC ACID
ACETIC ACID
PHOSPHORIC ACID
PYRIDINIUM COMPOUNDS
AMMONIUM FLUORIDES
ENERGY SPECTRA
ETCHING
ELECTRIC POTENTIAL
EXPERIMENTAL DATA