Simultaneous formation of emitter and passivation layer in a single rapid thermal cycle
- CNRS, Strasbourg (France). Lab. de Physique et Applications des Semiconducteurs
- FhG-ISE, Freiburg (Germany)
In this paper the authors investigate the simultaneous processing of the emitter junction and the emitter surface passivation by rapid thermal annealing (RTA) from a doped spin-on glass (SOG). Test structures and solar cells of different emitter profiles and surface concentrations were made by diluting two different doped spin-on glass liquids with methanol. By this procedure, oxide thickness and doping can be controlled. RTA was performed in an argon atmosphere in the temperature range of 850--1,000 C for 5--60 sec. The results show that emitter surface doping concentration between 1 {times} 10{sup 19} cm{sup {minus}3} and 3 {times} 10{sup 20} cm{sup {minus}3} and junction depth from 0.1 {micro}m could be obtained. Sheet resistances lower than 150 {Omega}/{open_square} could be easily reached. External quantum efficiency measurements from solar cells, made from CZ and FZ p-type silicon wafers, demonstrate the passivation effect of the remaining SOG-film. The highest efficiency obtained with this ohmic back contacted cells, which had an oxide thickness of about 70 nm, are 12.8%.
- OSTI ID:
- 191066
- Report Number(s):
- CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9610%%67
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty-fourth IEEE photovoltaic specialists conference -- 1994. Volume 2; PB: 1268 p.
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
COMPOSITE MATERIALS
FABRICATION
SILICON
SILICON OXIDES
ELECTRIC CONDUCTIVITY
SILICON SOLAR CELLS
PERFORMANCE
DOPED MATERIALS
PHOSPHORUS
SPIN-ON COATINGS
GLASS
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
QUANTUM EFFICIENCY
ELECTRIC POTENTIAL
CURRENT DENSITY
EXPERIMENTAL DATA