Photoelectrochemical diffusion length measurements on p-type multicrystalline silicon for industrial quality control

Book · Sat Dec 31 00:00:00 EST 1994

OSTI ID:191024

Sarti, D; Chareyron, B; Le, Q N ^[1]; Bastide, S ^[2]; Lincot, D ^[3]

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1. Photowatt International S.A., Bourgoin-Jallieu (France)
2. Lab. de Physique des Solides de Bellevue, Meudon (France)
3. Lab. d`Electrochimie et de Chimie Analytique, Paris (France)

The authors report on a method based on photoelectrochemistry which allows the measurement of diffusion lengths of multicrystalline silicon before fabricating the photovoltaic device. The results obtained with this method after two years experience on a production line, by the photovoltaic manufacturer Photowatt Int. are presented. It concerns the variation of the diffusion length within the ingots and its correlation with the short-circuit current of the final cells, and the effect of industrial gettering. The authors also present diffusion length maps on a 10 x 10 cm{sup 2} cell.

• OSTI ID: 191024
• Report Number(s): CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9610%%25
• Resource Relation: Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty-fourth IEEE photovoltaic specialists conference -- 1994. Volume 2; PB: 1268 p.
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
SILICON
DIFFUSION LENGTH
SILICON SOLAR CELLS
MATERIALS
PHOTOELECTROCHEMICAL CELLS
SEMICONDUCTOR MATERIALS
POTENTIOSTATS
HYDROFLUORIC ACID
ILLUMINANCE
PLATINUM
DOPED MATERIALS
BORON
GETTERING
PHOSPHORUS
QUALITY CONTROL
CORRELATIONS
EXPERIMENTAL DATA