Polycrystalline silicon thin-film solar cell prepared by the solid phase crystallization (SPC) method

Book · Sat Dec 31 00:00:00 EST 1994

OSTI ID:191017

Baba, T; Matsuyama, T; Sawada, T; Takahama, T; Wakisaka, K; Tsuda, S; Nakano, S ^[1]

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1. Sanyo Electric Co., Ltd., Hirakata, Osaka (Japan). New Materials Research Center

A solid phase crystallization (SPC) method was applied to the fabrication of thin-film polycrystalline silicon (poly-Si) for solar cells for the first time. Among crystalline silicon solar cells crystallized at a low temperature of less than 600 C, the world`s highest conversion efficiency of 8.5% was achieved in a solar cell using thin-film poly-Si with only 10 {micro}m thickness prepared by the SPC method. This solar cell showed high photosensitivity in the long-wavelength region of more than 800 nm and also exhibited no light-induced degradation after light exposure.

• OSTI ID: 191017
• Report Number(s): CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9610%%18
• Resource Relation: Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty-fourth IEEE photovoltaic specialists conference -- 1994. Volume 2; PB: 1268 p.
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON SOLAR CELLS
PERFORMANCE
SILICON
CHEMICAL VAPOR DEPOSITION
CRYSTALLIZATION
DOPED MATERIALS
PHOSPHORUS
ANNEALING
RAMAN SPECTROSCOPY
GRAIN SIZE
SCANNING ELECTRON MICROSCOPY
SURFACE COATING
SILANES
BORANES
INDIUM OXIDES
TIN OXIDES
ELECTRIC POTENTIAL
CURRENT DENSITY
FILL FACTORS
EFFICIENCY
DIFFUSION LENGTH
STABILITY
EXPERIMENTAL DATA