Investigation of silicon field-effect transistors in cryogenic amplifiers for radio frequency superconducting quantum interference devices
- Institut fuer Schicht-und Ionentechnik, Forschungszentrum Juelich GmbH (KFA), 52425 Juelich (Germany)
- Institut fuer Angewandte Physik der Justus Liebig Universitaet, Heinrich-Buff-Ring 16, 35392 Giebetaen (Germany)
We have prepared {ital n}-channel silicon field-effect transistors, which are capable of working at liquid helium temperatures (4.2 K) and used them in cooled preamplifiers for rf superconducting quantum interference device (SQUID) readout electronics. All metallizations of these transistors were made of niobium, to study the possibility of a further integration of a SQUID and FET on the same chip. Using the FETs in a cooled preamplifier together with a rf SQUID gradiometer, the flux noise of the system could be reduced by a factor of 3 compared to a room temperature low noise preamplifier. We have also performed calculations of a possible increase of the substrate temperature due to the power dissipation of the FET and have measured the cross talk between FET and SQUID. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- OSTI ID:
- 172041
- Journal Information:
- Review of Scientific Instruments, Vol. 66, Issue 5; Other Information: PBD: May 1995
- Country of Publication:
- United States
- Language:
- English
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