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Title: Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAs

Abstract

Positron-lifetime experiments have been performed to investigate the metastability of the point defects produced in the electron irradiation of semi-insulating GaAs. The measurements in darkness indicate the presence of Ga vacancies and Ga antisite defects in a negative charge state. Illumination at 25 K reveals another type of a defect, which has a vacancy in its metastable state. The metastable vacancies can be observed most effectively after illumination with 1.1-eV photons and they are persistent up to the annealing temperature of 80--100 K. The introduction rate of the metastable defects is about 0.3 cm{sup {minus}1}, which is close to the values reported earlier for the As antisite. The metastable properties of the defects resemble those of the well-known {ital EL}2 center in as-grown GaAs. We associate these defects to As antisites, which exhibit the metastability predicted by the theory: in the metastable configuration the As antisite atom relaxes away from the lattice position, leaving a Ga site vacant.

Authors:
; ; ;  [1]; ;  [2]
  1. Laboratory of Physics, Helsinki University of Technology, 02150 Espoo (Finland)
  2. Institut National des Sciences et Techniques Nucleaires, Centre d`Etudes Nucleaires de Saclay, 91191 Gif-sur-Yvette Cedex (France)
Publication Date:
OSTI Identifier:
165342
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 51; Journal Issue: 20; Other Information: PBD: 15 May 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; CRYSTAL DEFECTS; ELECTRON COLLISIONS; CRYSTAL LATTICES; MEV RANGE 01-10; VACANCIES; POINT DEFECTS; POST-IRRADIATION EXAMINATION; ELECTRON-POSITRON COLLISIONS

Citation Formats

Saarinen, K, Kuisma, S, Maekinen, J, Hautojaervi, P, Toernqvist, M, and Corbel, C. Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAs. United States: N. p., 1995. Web. doi:10.1103/PhysRevB.51.14152.
Saarinen, K, Kuisma, S, Maekinen, J, Hautojaervi, P, Toernqvist, M, & Corbel, C. Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAs. United States. https://doi.org/10.1103/PhysRevB.51.14152
Saarinen, K, Kuisma, S, Maekinen, J, Hautojaervi, P, Toernqvist, M, and Corbel, C. 1995. "Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAs". United States. https://doi.org/10.1103/PhysRevB.51.14152.
@article{osti_165342,
title = {Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAs},
author = {Saarinen, K and Kuisma, S and Maekinen, J and Hautojaervi, P and Toernqvist, M and Corbel, C},
abstractNote = {Positron-lifetime experiments have been performed to investigate the metastability of the point defects produced in the electron irradiation of semi-insulating GaAs. The measurements in darkness indicate the presence of Ga vacancies and Ga antisite defects in a negative charge state. Illumination at 25 K reveals another type of a defect, which has a vacancy in its metastable state. The metastable vacancies can be observed most effectively after illumination with 1.1-eV photons and they are persistent up to the annealing temperature of 80--100 K. The introduction rate of the metastable defects is about 0.3 cm{sup {minus}1}, which is close to the values reported earlier for the As antisite. The metastable properties of the defects resemble those of the well-known {ital EL}2 center in as-grown GaAs. We associate these defects to As antisites, which exhibit the metastability predicted by the theory: in the metastable configuration the As antisite atom relaxes away from the lattice position, leaving a Ga site vacant.},
doi = {10.1103/PhysRevB.51.14152},
url = {https://www.osti.gov/biblio/165342}, journal = {Physical Review, B: Condensed Matter},
number = 20,
volume = 51,
place = {United States},
year = {Mon May 15 00:00:00 EDT 1995},
month = {Mon May 15 00:00:00 EDT 1995}
}