Interfacial atomic composition and Schottky barrier heights at the Al/GaAs(001) interface
- Xerox Webster Research Center, NY (United States)
The influence of different interfacial chemical compositions on the Schottky barrier heights across the Al/GaAs(001) interface is studied using first-principles local density functional calculations. The barrier heights are calculated for seven different interfacial chemical compositions, including the chemically abrupt As-terminated and Ga-terminated interfaces, and also several other interfaces related by Al{leftrightarrow}Ga place exchange or containing As antisites. We find p-type barrier heights {phi}p that vary by 0.4 eV, demonstrating a significant influence of the interface composition on the resulting barrier heights. The barrier height variation is explained by the different chemical bonding at the interface in the various cases. The metal induced gap states (MIGS) of two structures with different barrier heights are compared in order to demonstrate why such states do not result in barrier heights independent of interfacial chemical composition.
- OSTI ID:
- 161734
- Report Number(s):
- CONF-930115-; ISSN 0734-211X; TRN: 95:004881-0054
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 4; Conference: 20. physics and chemistry of semiconductor interfaces, Williamsburg, VA (United States), 25-29 Jan 1993; Other Information: PBD: Jul-Aug 1993
- Country of Publication:
- United States
- Language:
- English
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