PECVD deposition of a-B/C on Si using a surface-ECR plasma source and O-carborane precursor gas
Vacuum wall deposition of a-B/C films has had tremendous positive impact on the performance of tokamak fusion reactors. In the present work, sublimed gas from o-carborane and helium carrier gas are used to create a plasma using the surface-ECR source. The plasma operates in a pressure range of 5 to 15 mTorr and typical flow rates are 5 sccm He plus 0.5--1 sccm o-carborane vapor. The film deposition rate is approximately 200 {angstrom}/minute. Microwave power levels range 200--500 W at 2.45 GHz. The authors present data from the deposition plasma, including Langmuir probe measurements and time-of-flight (TOF) analyzer measurements of elemental and molecular ion species concentrations. Plasma electron densities on the order of n{sub e} = 10{sup 11}cm{sup {minus}3} and electron temperatures of T{sub e} {approx} 2eV were measured. Using these measurements a self-consistent plasma equilibrium is being modeled. The films have been analyzed for atomic constituency using XPS. Thickness is measured by profilometry. Preliminary x-ray diffraction analysis has been performed. Films with a thickness of a few thousand {angstrom} are routinely obtained.
- OSTI ID:
- 153898
- Report Number(s):
- CONF-950612-; ISBN 0-7803-2669-5; TRN: 96:001516
- Resource Relation:
- Conference: 22. international conference on plasma science, Madison, WI (United States), 5-8 Jun 1995; Other Information: PBD: 1995; Related Information: Is Part Of IEEE conference record -- abstracts: 1995 IEEE international conference on plasma science; PB: 312 p.
- Country of Publication:
- United States
- Language:
- English
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