Computer Simulation of Displacement Damage in Silicon Carbide
We have performed molecular dynamics simulation of displacement events on silicon and carbon sublattices in silicon carbide for displacement doses ranging from 0.005 to 0.5 displacements per atom. Our results indicate that the displacement threshold energy is about 21 eV for C and 35 eV for Si, and amorphization can occur by accumulation of displacement damage regardless of whether Si or C is displaced. In addition, we have simulated defect production in high-energy cascades as a function of the primary knock-on atom energy and observed features that are different from the case of damage accumulation in Si. These systematic studies shed light on the phenomenon of non-ionizing energy loss that is relevant to understanding space radiation effects in semiconductor devices.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 15020033
- Report Number(s):
- PNNL-SA-43546; 8208; KC0201020; TRN: US0504265
- Resource Relation:
- Conference: Materials for Space Applications, November 29-December 3, 2004, Boston, Massachusetts, U.S.A. Materials Research Society Symposium Proceedings, 851(317-322 ; Materials Research Society,Warrendale,,United States.
- Country of Publication:
- United States
- Language:
- English
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