Damage Accumulation and Annealing in 6H-SiC Irradiated with Si+
Damage accumulation and annealing in 6H-silicon carbide (alpha-SiC) single crystals have been studied in situ using 2.0 MeV HeRBS in a <0001>-axial channeling geometry (RBS/C). The damage was induced by 550 keV Si ion implantation (30 degrees off normal) at a temperature of -110 degrees C, and the damage recovery was investigated by subsequent isochromal annealing (20 min) over the temperature range from -110 degrees C to 900 degrees C. At ion fluences below 7.5 X 10 13 Si/cm (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences of 6.6 x 10 15 Si/cm (-90 degrees C), an amorphous layer is created from the surface to a depth of 0.6 mu-m. Because of recovery processes at the buried crystalline-amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10%) with increasing temperature over the range from -90 degrees C to 600 degrees C.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15007481
- Report Number(s):
- PNNL-SA-29780; KC0201020
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 143(3):333-341, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 143(3):333-341
- Country of Publication:
- United States
- Language:
- English
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