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Title: Defects in Photovoltaic Materials and the Origins of Failure to Dope Them: Preprint

Defects in Photovoltaic Materials and the Origins of Failure to Dope Them: Preprint I will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is, in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOs work. Recent results on the surprising stability of polar (112)+ surfaces of CIS will also be described in this context.
Authors: ; ;
Publication Date:
OSTI Identifier:15007053
Report Number(s):NREL/CP-590-32216
TRN: US200413%%102
DOE Contract Number:AC36-99-GO10337
Resource Type:Conference
Resource Relation:Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
Research Org:National Renewable Energy Lab., Golden, CO. (US)
Sponsoring Org:US Department of Energy (US)
Country of Publication:United States
Language:English
Subject: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFECTS; DESIGN; STABILITY; SOLAR ENERGY PV; N-TYPE DOPING; SEMICONDUCTORS; DOPING LIMIT RULE; OXIDES; CONDUCTION BAND MINIMUM; CALCULATED FORMATION ENERGIES; CHALCOPYRITE; DOZINC-BLENDE; SOLAR ENERGY - PHOTOVOLTAICS; SOLID STATE THEORY; MATERIALS SCIENCE AND SEMICONDUCTORS; ELECTRONIC STRUCTURE OF DEFECTS AND IMPURITIES: MAIN-GROUP DEFECTS AND IMPURITIES IN SEMICONDUCTORS; ELECTRONIC STRUCTURE OF SPECIFIC BULK SOLIDS: BINARY SEMICONDUCTORS AND INSULATORS