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Title: Formation and Characterization of CdSxTe1-x Alloys Prepared from Thin Film Couples of CdS and CdTe: Preprint

Conference ·
OSTI ID:15006969

This conference paper describes the alloying between CdS and CdTe at the CdS/CdTe interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x= 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films with a thickness of {approx}100 nm were deposited by chemical-bath deposition on glass/SnO2 substrates, and CdTe films with a thickness of 300 and 800 nm were deposited by close-spaced sublimation. The samples were treated in the presence of vapor CdCl2 at 400-450 C for 5 min. X-ray diffraction and optical analysis of the samples showed that S content in the CdSxTe1-x alloy increased systematically with the CdCl2 HT temperature. CdSxTe1-x alloy with x= 0.14 was identified for the samples treated at 4 30C, which is much higher than expected from the miscibility gap at 430C.

Research Organization:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
15006969
Report Number(s):
NREL/CP-520-31435; TRN: US200412%%538
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
Country of Publication:
United States
Language:
English