Defect Structure and Evolution in Silicon Carbide Irradiated to 1 dpa-SiC at 1100 degrees C
Transmission electron microscopy, swelling measurements, isochronal annealing, and thermal diffusivity testing were used to characterize the effects of radiation damage in SiC. Together, these techniques provided a comprehensive set of tools for observing and characterizing the structure and evolution of radiation-induced defects in SiC as a function of irradiation temperature and dose. In this study, two types of dense, crystalline, monolithic SiC were subjected to irradiation doses up to 1 dpa-SiC at a temperature of 1100?C, as well as post-irradiation annealing up to 1500?C. The microscopic defect structures observed by TEM were correlated to changes in the macroscopic dimensions, thermal diffusivity and thermal conductivity. The results demonstrated the value of using ultrapure beta-SiC as an effective reference material to characterize the nature of expected radiation damage in other, more complex, SiC-based materials such as SiC/SiC composites.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15003812
- Report Number(s):
- PNNL-SA-33677; JNUMAM; 820101000; TRN: US1005080
- Journal Information:
- Journal of Nuclear Materials, Vol. 317, Issue 2-3; Other Information: PBD: 1 May 2003; ISSN 0022-3115
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON CARBIDES
IRRADIATION
CRYSTAL DEFECTS
RADIATION EFFECTS
RADIATION DOSES
TEMPERATURE DEPENDENCE
THERMAL CONDUCTIVITY
THERMAL DIFFUSIVITY
SILICON CARBIDE
NEUTRON RADIATION EFFECTS
POINT DEFECT STRUCTURE AND EVOLUTION
IRRADIATION-INDUCED SWELLING
TRANSMISSION ELECTRON MICROSCOPY
THERMAL DIFFUSIVITY AND CONDUCTIVITY