Ion Beam Slicing of Single Crystal Oxide Thin Films

Conference · Wed Apr 25 00:00:00 EDT 2001

OSTI ID:15001907

Thevuthasan, Suntharampillai; Shutthanandan, V; Jiang, Weilin; Weber, William J

Epitaxial thin film liftoff using the ion-slicing method has been applied to SrTiO single crystals. Rutherford backscattering spectrometry along with channeling (RBS/C) has been used to investigate the relative disorder as a function of temperature from the samples that were irradiated by 40 KeV hydrogen ions to a fluence of 5.0x10 16 H/cm. Hydrogen profiles were also measured as a function of annealing temperature to understand the role of hydrogen in the ion slicing process. Film cleavage occurred during or after annealing at 570 K, and cleaved film has been successfully transferred to a silicon substrate using ceramic adhesive.

• Research Organization: Pacific Northwest National Lab., Richland, WA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC06-76RL01830
• OSTI ID: 15001907
• Report Number(s): PNNL-SA-34039; KC0201020; TRN: US200419%%179
• Resource Relation: Conference: Ion Beam Synthesis and Processing of Advanced Materials, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 25 Apr 2001
• Country of Publication: United States
• Language: English

Related Subjects

08 HYDROGEN
ANNEALING
CERAMICS
CHANNELING
CLEAVAGE
HYDROGEN
HYDROGEN IONS
ION BEAMS
MONOCRYSTALS
OXIDES
PROCESSING
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SUBSTRATES
SYNTHESIS
THIN FILMS
CRYSTALS
RBS/C
FILM CLEAVAGE
SILICON SUBSTRATES
OXIDE