Electro-and photoluminescence studies from ultrathin Si{sub m}Ge{sub n} superlattices
- Daimler Benz Research Center, Ulm (Germany)
- Technical Univ. of Munich, Garching (Germany)
We have observed strong photoluminescence signals in the near infrared (hv{approximately}0.8 eV) from short-period Si{sub m}Ge{sub n} strained layer superlattices (SLS) by growing the SLS on a step graded buffer by molecular beam epitaxy. These luminescence signals are about one order of magnitude stronger than the signals observed so far which can be attributed to the excellent material quality of the SLS which has been achieved by growing at higher temperatures (T{sub g}=500 {degrees}C) and using the technique of Sb surfactant. In addition the SLSs were grown on the step graded buffer which results in a two to three orders of magnitude lower threading dislocation density at the interface compared to the {open_quotes}simple{close_quotes} buffers. Electroluminescence signals observed from p-i-n-doped diodes with an {open_quotes}SF{close_quotes}-type buffer show broad signals at a different wavelength the origin of which is still unclear. 12 refs., 4 figs., 1 tab.
- OSTI ID:
- 147075
- Report Number(s):
- CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0084
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
- Country of Publication:
- United States
- Language:
- English
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