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Title: On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Abstract

InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530–590 nm. The AlzGa1-zN (z~0.38) IL is ~1–2 nm thick, and is grown after and at the same growth temperature as the ~3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ~10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to~0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relativemore » impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is also explored, along with implications to conventional longer wavelength emitters.« less

Authors:
 [1];  [1];  [2];  [1];  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1426883
Report Number(s):
SAND-2014-17728J
Journal ID: ISSN 0022-0248; 537540
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 415; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; Interfaces; X-ray diffraction; Metalorganic vapor phase epitaxy; InGaN; Light-emitting diodes; Solar cells

Citation Formats

Koleske, D. D., Fischer, A. J., Bryant, B. N., Kotula, P. G., and Wierer, J. J. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers. United States: N. p., 2015. Web. doi:10.1016/j.jcrysgro.2014.12.034.
Koleske, D. D., Fischer, A. J., Bryant, B. N., Kotula, P. G., & Wierer, J. J. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers. United States. https://doi.org/10.1016/j.jcrysgro.2014.12.034
Koleske, D. D., Fischer, A. J., Bryant, B. N., Kotula, P. G., and Wierer, J. J. 2015. "On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers". United States. https://doi.org/10.1016/j.jcrysgro.2014.12.034. https://www.osti.gov/servlets/purl/1426883.
@article{osti_1426883,
title = {On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers},
author = {Koleske, D. D. and Fischer, A. J. and Bryant, B. N. and Kotula, P. G. and Wierer, J. J.},
abstractNote = {InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530–590 nm. The AlzGa1-zN (z~0.38) IL is ~1–2 nm thick, and is grown after and at the same growth temperature as the ~3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ~10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to~0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is also explored, along with implications to conventional longer wavelength emitters.},
doi = {10.1016/j.jcrysgro.2014.12.034},
url = {https://www.osti.gov/biblio/1426883}, journal = {Journal of Crystal Growth},
issn = {0022-0248},
number = C,
volume = 415,
place = {United States},
year = {Wed Jan 07 00:00:00 EST 2015},
month = {Wed Jan 07 00:00:00 EST 2015}
}

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