Effect of gas ambient on the resistance of BF{sup +}{sub 2} ion-implanted polycrystalline diamond film
- National Tsing Hua Univ., Hsin-Chu, Taiwan (China). Dept. of Materials Science and Engineering
The resistance of BF{sup +}{sub 2} ion-implanted-polycrystalline diamond film drifted higher with time in air. The drift problem in resistance was eliminated by a temperature-cycling treatment between room temperature and 400 C under vacuum. The resistance of the temperature-cycled diamond film drifted higher again when the diamond film was exposed in different gas ambients. The effects of H{sub 2}, N{sub 2}, and O{sub 2} gas ambients on the resistance of the temperature-cycled diamond film were similar. The resistance drifted higher with time and then reached a saturation value. No saturation plateau was observed for air exposure, which was different from that in H{sub 2}, N{sub 2}, or O{sub 2} gas exposure. The increase in resistance was attributed to gas trapped inside implanted polycrystalline diamond films. A passivation layer was suggested to protect diamond films from the drift problem.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 142222
- Journal Information:
- Journal of the Electrochemical Society, Vol. 141, Issue 1; Other Information: PBD: Jan 1994
- Country of Publication:
- United States
- Language:
- English
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