Suppression of side-etching in C{sub 2}H{sub 6}/H{sub 2}/O{sub 2} reactive ion etching for the fabrication of an InGaAsP/InP P-substrate buried-heterostructure laser diode
- Mitsubishi Electric Corp., Amagasaki, Hyogo (Japan). Central Research Lab.
- Mitsubishi Electric Corp., Itami, Hyogo (Japan). Optoelectronic and Microwave Device Lab.
A reactive ion etching (RIE) technique using a C{sub 2}H{sub 6}, H{sub 2}, and O{sub 2} mixture was applied to the fabrication of InGaAsP/InP (P-substrate) partially inverted buried heterostructure laser diodes, which have been commercially produced for their superior characteristics. The addition of O{sub 2} suppressed side etching and made it possible to fabricate ridge mesa structures for the laser diodes with a height of 4 {mu}m and a width of 1{mu}m with superior controllability. The effects of O{sub 2} addition were investigated by Auger electron spectroscopy and a mechanism suppressing side etching was examined. The characteristics including lifetime of the laser diodes fabricated by the RIE technique were as excellent as those of laser diodes fabricated by wet etching.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 142192
- Journal Information:
- Journal of the Electrochemical Society, Vol. 140, Issue 12; Other Information: PBD: Dec 1993
- Country of Publication:
- United States
- Language:
- English
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High-performance InGaAsP/InP buried-heterostructure lasers and arrays defined by ion-beam-assisted etching
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