New directions in the design of lithographic resist materials: A case study
- AT&T Bell Labs., Murray Hill, NJ (United States)
In the last decade, major advances in fabricating VLSI electronic devices have placed increasing demands on microlithography, the technology used to generate today`s integrated circuits. In 1976, state-of-the-art integrated circuits contained several thousand transistors with minimum features of 5 to 6 {mu}m. Today, they have several million transistors and minimum features of less than 0.7 {mu}m. Within the next 10 to 15 years, a new form of lithography will be required that routinely produces features of less than 0.25{mu}m. Short-wavelength (deep-UV) photolithography and scanning electron-beam, X-ray, and scanning ion-beam lithography are the possible alternatives to conventional photolithography. However, each needs new resists and processes. When deep-UV photolithography is implemented, it will represent the first widespread use in manufacture of a lithographic technology that requires an entirely new resist technology. The authors describe the processes involved in the development of a resist system for this lithographic technique.
- OSTI ID:
- 141841
- Report Number(s):
- CONF-930304-; TRN: 93:003688-1529
- Resource Relation:
- Conference: 205. American Chemical Society national meeting, Denver, CO (United States), 28 Mar - 2 Apr 1993; Other Information: PBD: 1993; Related Information: Is Part Of 205th ACS national meeting; PB: 1951 p.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Mask Blank Defect Detection
Extreme ultraviolet lithography