Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat

Suh, Hyo Seon; Kim, Do Han; Moni, Priya; Xiong, Shisheng; Ocola, Leonidas E.; Zaluzec, Nestor J.; Gleason, Karen K.; Nealey, Paul F.

doi:10.1038/nnano.2017.34

Title: Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat

Journal Article · Mon Mar 27 00:00:00 EDT 2017 · Nature Nanotechnology

DOI:https://doi.org/10.1038/nnano.2017.34· OSTI ID:1373307

Suh, Hyo Seon ^[1]; Kim, Do Han ^[2]; Moni, Priya ^[2]; Xiong, Shisheng ^[1];

^[3]; Zaluzec, Nestor J. ^[3]; Gleason, Karen K. ^[2]; Nealey, Paul F. ^[1]

Univ. of Chicago, Chicago, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)

Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is a promising approach for sub-10-nm surface patterning. DSA requires the control of interfacial properties on both interfaces of a BCP film to induce the formation of domains that traverse the entire film with a perpendicular orientation. Here we show a methodology to control the interfacial properties of BCP films that uses a polymer topcoat deposited by initiated chemical vapour deposition (iCVD). The iCVD topcoat forms a crosslinked network that grafts to and immobilizes BCP chains to create an interface that is equally attractive to both blocks of the underlying copolymer. The topcoat, in conjunction with a chemically patterned substrate, directs the assembly of the grating structures in BCP films with a half-pitch dimension of 9.3 nm. As the iCVD topcoat can be as thin as 7 nm, it is amenable to pattern transfer without removal. As a result, the ease of vapour-phase deposition, applicability to high-resolution BCP systems and integration with pattern-transfer schemes are attractive properties of iCVD topcoats for industrial applications.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22), Materials Sciences and Engineering Division; National Science Foundation (NSF); U.S. Army Research Laboratory - U.S. Army Research Office (ARO)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1373307

Journal Information:: Nature Nanotechnology, Vol. 12, Issue 6; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 131 works

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