skip to main content

SciTech ConnectSciTech Connect

This content will become publicly available on November 18, 2017

Title: Charge neutral MoS2 field effect transistors through oxygen plasma treatment

Authors:
 [1] ;  [1] ;  [2] ;  [1]
  1. Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA
  2. XEI Scientific, Redwood City, California 94063, USA
Publication Date:
OSTI Identifier:
1332764
Grant/Contract Number:
FG02-07ER46376
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 19; Related Information: CHORUS Timestamp: 2016-11-18 13:04:35; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English