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Title: Proximity enhanced quantum spin Hall state in graphene

Journal Article · · Carbon
 [1];  [1];  [2];  [1];  [3];  [1];  [4]
  1. Univ. of Bremen, Bremen (Germany)
  2. Max Planck Inst. for Chemical Physics of Solids, Dresden (Germany); Max Planck Institute for Physics of Complex Systems, Dresden (Germany)
  3. Max Planck Inst. for Chemical Physics of Solids, Dresden (Germany)
  4. Univ. of Nevada, Las Vegas, NV (United States)

Graphene is the first model system of two-dimensional topological insulator (TI), also known as quantum spin Hall (QSH) insulator. The QSH effect in graphene, however, has eluded direct experimental detection because of its extremely small energy gap due to the weak spin–orbit coupling. Here we predict by ab initio calculations a giant (three orders of magnitude) proximity induced enhancement of the TI energy gap in the graphene layer that is sandwiched between thin slabs of Sb2Te3 (or MoTe2). This gap (1.5 meV) is accessible by existing experimental techniques, and it can be further enhanced by tuning the interlayer distance via compression. We reveal by a tight-binding study that the QSH state in graphene is driven by the Kane–Mele interaction in competition with Kekulé deformation and symmetry breaking. As a result, the present work identifies a new family of graphene-based TIs with an observable and controllable bulk energy gap in the graphene layer, thus opening a new avenue for direct verification and exploration of the long-sought QSH effect in graphene.

Research Organization:
Univ. of Nevada, Las Vegas, NV (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA0001982
OSTI ID:
1332441
Alternate ID(s):
OSTI ID: 1337524
Journal Information:
Carbon, Vol. 87, Issue C; ISSN 0008-6223
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 30 works
Citation information provided by
Web of Science

References (24)

Colloquium: Topological insulators journal November 2010
Topological insulators and superconductors journal October 2011
Quantum Spin Hall Effect in Graphene journal November 2005
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells journal December 2006
Nonlocal Transport in the Quantum Spin Hall State journal July 2009
Spin-orbit gap of graphene: First-principles calculations journal January 2007
Intrinsic and Rashba spin-orbit interactions in graphene sheets journal October 2006
Impurity-Induced Spin-Orbit Coupling in Graphene journal July 2009
Epitaxial Heterostructures of Ultrathin Topological Insulator Nanoplate and Graphene journal August 2010
Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy journal October 2010
Proximity-induced giant spin-orbit interaction in epitaxial graphene on a topological insulator journal February 2013
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Self-interaction correction to density-functional approximations for many-electron systems journal May 1981
Semiempirical GGA-type density functional constructed with a long-range dispersion correction journal January 2006
Oscillatory crossover from two-dimensional to three-dimensional topological insulators journal January 2010
Massive Dirac fermions and spin physics in an ultrathin film of topological insulator journal March 2010
Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit journal July 2010
Kekulé structures of polyphenes journal October 1982
Topological insulators with inversion symmetry journal July 2007
Z2 Topological Order and the Quantum Spin Hall Effect journal September 2005
Valley-Hall kink and edge states in multilayer graphene journal August 2011
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors journal October 2011
Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides MoS 2 , MoSe 2 , WS 2 , and WSe 2 journal February 2014
Spin–orbit proximity effect in graphene journal September 2014

Cited By (7)

Electronic and magnetic properties of H-terminated graphene nanoribbons deposited on the topological insulator Sb2Te3 journal July 2016
Hydrogenated borophene as a stable two-dimensional Dirac material with an ultrahigh Fermi velocity journal January 2016
Topological phases in two-dimensional materials: a review journal May 2016
Electronic and magnetic properties of H-terminated graphene nanoribbons deposited on the topological insulator Sb2Te3 text January 2016
Topological Phases in Two-Dimensional Materials: A Brief Review text January 2015
PAI-graphene: A new topological semimetallic two-dimensional carbon allotrope with highly tunable anisotropic Dirac cones journal December 2020
Topological insulators in ordered double transition metals M$'_2$M$"$C$_2$ (M$'$= Mo, W; M$"$= Ti, Zr, Hf) MXenes text January 2016

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