Growth and characterization of TbAs films

Bomberger, Cory C.; Tew, Bo E.; Lewis, Matthew R.; Zide, Joshua M.  O.

doi:10.1063/1.4967841

Title: Growth and characterization of TbAs films

Journal Article · Tue Nov 15 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4967841· OSTI ID:1465794

Bomberger, Cory C. ^[1]; Tew, Bo E. ^[1];

^[1];

^[1]

Univ. of Delaware, Newark, DE (United States). Department of Materials Science and Engineering

We report on the molecular beam epitaxy growth and characterization of TbAs films. In situ reflection high energy electron diffraction and ex situ high resolution X-ray diffraction, reciprocal space mapping, and both scanning and transmission electron microscopy are used to confirm the complete film growth and study the films’ morphology. Spectrophotometry measurements provide the energy of optical transitions, revealing a red shift in optical band gap with increasing thickness. The Hall effect measurements show temperature insensitive carrier concentrations, resistivities, and mobilities. The carrier concentration decreases and resistivity increases with increasing film thickness; mobility appears thickness independent. Here, the films’ reflectivity, obtained via Fourier transform infrared spectroscopy, shows a possible Drude edge that differs from the trend of other lanthanide monopnictides. Lastly, these measurements show that TbAs is a degenerately doped semiconductor with a combination of electronic and optical properties that is dissimilar to other lanthanide monopnictides.

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Research Organization:: Univ. of Delaware, Newark, DE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0008166

OSTI ID:: 1465794

Alternate ID(s):: OSTI ID: 1332368

Journal Information:: Applied Physics Letters, Vol. 109, Issue 20; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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