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Title: Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy

We used time-resolved photoluminescence micro-scopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm2/(V s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.
Authors:
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Publication Date:
OSTI Identifier:
1330947
Report Number(s):
NREL/JA-5900-66373
Journal ID: ISSN 2156-3381
DOE Contract Number:
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: IEEE Journal of Photovoltaics; Journal Volume: 6; Journal Issue: 6
Publisher:
IEEE
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE cadmium telluride; PV device; recombination; photoluminescence