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Title: Bismuth-induced Raman modes in GaP 1₋ x Bi x

Dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on GaP1- x Bi x epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314 cm-1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1329366
Report Number(s):
NREL/JA--5K00-66536
Journal ID: ISSN 0021-4922
DOE Contract Number:
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Japanese Journal of Applied Physics; Journal Volume: 55; Journal Issue: 10
Publisher:
Japan Society of Applied Physics
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS semiconductors; local vibrational modes; dilute bismide alloys