skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method

Abstract

Synchrotron X-ray Topography is a powerful technique to study defects structures particularly dislocation configurations in single crystals. Complementing this technique with geometrical and contrast analysis can enhance the efficiency of quantitatively characterizing defects. In this study, the use of Synchrotron White Beam X-ray Topography (SWBXT) to determine the line directions of threading dislocations in 4H–SiC axial slices (sample cut parallel to the growth axis from the boule) is demonstrated. This technique is based on the fact that the projected line directions of dislocations on different reflections are different. Another technique also discussed is the determination of the absolute Burgers vectors of threading mixed dislocations (TMDs) using Synchrotron Monochromatic Beam X-ray Topography (SMBXT). This technique utilizes the fact that the contrast from TMDs varies on SMBXT images as their Burgers vectors change. By comparing observed contrast with the contrast from threading dislocations provided by Ray Tracing Simulations, the Burgers vectors can be determined. Thereafter the distribution of TMDs with different Burgers vectors across the wafer is mapped and investigated.

Authors:
ORCiD logo; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
INDUSTRY
OSTI Identifier:
1328796
Resource Type:
Journal Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 452; Journal Issue: C; Conference: Big Sky, MT; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
ENGLISH
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; A1. Characterization; A1. X-ray topography; A1. Threading mixed dislocations; B2. Silicon carbide

Citation Formats

Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, and Dudley, Michael. Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method. United States: N. p., 2016. Web. doi:10.1016/j.jcrysgro.2015.12.028.
Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, & Dudley, Michael. Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method. United States. https://doi.org/10.1016/j.jcrysgro.2015.12.028
Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, and Dudley, Michael. 2016. "Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method". United States. https://doi.org/10.1016/j.jcrysgro.2015.12.028.
@article{osti_1328796,
title = {Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method},
author = {Guo, Jianqiu and Yang, Yu and Wu, Fangzhen and Sumakeris, Joe and Leonard, Robert and Goue, Ouloide and Raghothamachar, Balaji and Dudley, Michael},
abstractNote = {Synchrotron X-ray Topography is a powerful technique to study defects structures particularly dislocation configurations in single crystals. Complementing this technique with geometrical and contrast analysis can enhance the efficiency of quantitatively characterizing defects. In this study, the use of Synchrotron White Beam X-ray Topography (SWBXT) to determine the line directions of threading dislocations in 4H–SiC axial slices (sample cut parallel to the growth axis from the boule) is demonstrated. This technique is based on the fact that the projected line directions of dislocations on different reflections are different. Another technique also discussed is the determination of the absolute Burgers vectors of threading mixed dislocations (TMDs) using Synchrotron Monochromatic Beam X-ray Topography (SMBXT). This technique utilizes the fact that the contrast from TMDs varies on SMBXT images as their Burgers vectors change. By comparing observed contrast with the contrast from threading dislocations provided by Ray Tracing Simulations, the Burgers vectors can be determined. Thereafter the distribution of TMDs with different Burgers vectors across the wafer is mapped and investigated.},
doi = {10.1016/j.jcrysgro.2015.12.028},
url = {https://www.osti.gov/biblio/1328796}, journal = {Journal of Crystal Growth},
issn = {0022-0248},
number = C,
volume = 452,
place = {United States},
year = {Sat Oct 01 00:00:00 EDT 2016},
month = {Sat Oct 01 00:00:00 EDT 2016}
}