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Title: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport

Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [3] ;  [5] ;  [4] ;  [6] ;  [2] ;  [3] ;  [7]
  1. Department of Chemistry and the Materials Research Center, Northwestern University, 2145, Sheridan Road Evanston IL 60208 USA; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 China
  2. Applied Physics Program and the Materials Research Center, Northwestern University, 2220 Campus Drive Evanston IL 60208 USA
  3. Department of Chemistry and the Materials Research Center, Northwestern University, 2145, Sheridan Road Evanston IL 60208 USA
  4. Department of Materials Science and the Materials Research Center, Northwestern University, 2220 Campus Drive Evanston IL 60208 USA
  5. DND-CAT Synchrotron Research Center APS/ANL Building, 432A, 9700 S. Cass Ave. Argonne IL 60439 USA
  6. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 China
  7. Department of Chemistry and the Materials Research Center, Northwestern University, 2145, Sheridan Road Evanston IL 60208 USA; Polyera Corporation, 8045 Lamon Avenue Skokie IL 60077 USA
Publication Date:
OSTI Identifier:
1328790
Resource Type:
Journal Article
Resource Relation:
Journal Name: Advanced Functional Materials; Journal Volume: 26; Journal Issue: 34
Publisher:
Wiley
Research Org:
Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
Sponsoring Org:
NSFU.S. OFFICE OF NAVAL RESEARCH
Country of Publication:
United States
Language:
ENGLISH