R&D100: 6.5kV Enhancement-Mode Silicon Carbide JFET Switch

Multimedia · Thu Nov 19 00:00:00 EST 2015

OSTI ID:1328738

Dries, Chris; Hostetler, John; Atcitty, Stan

Researchers at Sandia National Laboratories have partnered with United Silicon Carbide, Inc. to combine advanced materials with novel manufacturing ideas to build a new product for significantly more efficient power conversion. Harnessing the unique features of silicon carbide, this first of its kind device allows higher voltage switching, and reductions in switching losses to significantly boost the efficiency and reliability of power generation and power conversion.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• OSTI ID: 1328738
• Country of Publication: United States
• Language: English

Related Subjects

25 ENERGY STORAGE
24 POWER TRANSMISSION AND DISTRIBUTION
SILICON CARBIDE
POWER CONVERSION
ELECTRICITY
TRANSISTOR