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Title: van der Waals epitaxy of CdTe thin film on graphene

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4964127· OSTI ID:1465766
 [1];  [2];  [3];  [2];  [3];  [2];  [2];  [2];  [1]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Materials, Devices, and Integrated Systems, Dept. of Electrical, Computer and Systems Engineering
  2. Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Materials, Devices, and Integrated Systems, Dept. of Physics, Applied Physics and Astronomy
  3. Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Materials, Devices, and Integrated Systems, Dept. of Materials Science and Engineering
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van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. Here in this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO2/Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that, despite the relatively small energy differences, the graphene buffer layer does pass epitaxial information to CdTe as the parallel epitaxy, obtained in the experiment, is energetically favored. The work paves a way for the growth of high quality CdTe film on a large area as well as on the amorphous substrates.

Research Organization:
Rensselaer Polytechnic Inst., Troy, NY (United States); Univ. of California, Oakland, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC); National Science Foundation (NSF)
Grant/Contract Number:
SC0002623; AC02-05CH11231; DMR-1305293; 1104786
OSTI ID:
1465766
Alternate ID(s):
OSTI ID: 1328555; OSTI ID: 1418596
Journal Information:
Applied Physics Letters, Vol. 109, Issue 14; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 24 works
Citation information provided by
Web of Science

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Cited By (7)

Ultrahigh‐Detectivity Photodetectors with Van der Waals Epitaxial CdTe Single‐Crystalline Films journal April 2019
Remote homoepitaxy of ZnO microrods across graphene layers journal January 2018
van der Waals epitaxial ZnTe thin film on single-crystalline graphene journal January 2018
Analyses of orientational superlattice domains in epitaxial ZnTe thin films grown on graphene and mica journal November 2018
Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates journal August 2018
Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer journal February 2018
Remote epitaxy of copper on sapphire through monolayer graphene buffer journal September 2018

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