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Title: Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4964251· OSTI ID:1328523
 [1];  [2];  [1];  [2];  [3];  [3];  [1]
  1. Department of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland
  2. National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
  3. SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203, USA
+ Show Author Affiliations

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-98CH10886
OSTI ID:
1328523
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 120 Journal Issue: 13; ISSN 0021-8979
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

References (18)

Height-selective etching for regrowth of self-aligned contacts using MBE journal March 2009
Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy journal December 2014
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs journal August 2012
Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing journal January 2007
Schottky barriers and semiconductor band structures journal November 1985
Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n + -In 0.53 Ga 0.47 As journal October 2014
Calculations of electron inelastic mean free paths. IX. Data for 41 elemental solids over the 50 eV to 30 keV range journal February 2011
Characterization of low-resistance ohmic contacts to n - and p -type InGaAs journal July 2013
Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)−(4×2) journal June 2010
Crystal structure and epitaxial relationship of Ni 4 InGaAs 2 films formed on InGaAs by annealing
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 1 https://doi.org/10.1116/1.4769266
journal January 2013
InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology journal June 2009
A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs journal January 2012
Ultralow resistance in situ Ohmic contacts to InGaAs/InP journal November 2008
Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides journal December 2009
Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces journal December 2010
In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain journal January 2011
Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
  • Baraskar, Ashish K.; Wistey, Mark A.; Jain, Vibhor
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 4 https://doi.org/10.1116/1.3182737
journal January 2009
Ex situ Ohmic contacts to n-InGaAs
  • Baraskar, Ashish; Wistey, Mark A.; Jain, Vibhor
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 4 https://doi.org/10.1116/1.3454372
journal July 2010

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