Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers
Journal Article
·
· Materials Science Forum (Online)
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- INDUSTRY
- OSTI ID:
- 1328038
- Journal Information:
- Materials Science Forum (Online), Vol. 858, Issue 05, 2016; ISSN 1662-9752
- Publisher:
- Trans Tech Publications
- Country of Publication:
- United States
- Language:
- ENGLISH
Similar Records
Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers
Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers
Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers
Journal Article
·
Sat Oct 01 00:00:00 EDT 2016
· Journal of Crystal Growth
·
OSTI ID:1328038
+7 more
Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers
Journal Article
·
Mon Oct 03 00:00:00 EDT 2016
· ECS Transactions (Online)
·
OSTI ID:1328038
+9 more
Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers
Journal Article
·
Sat Oct 01 00:00:00 EDT 2016
· Journal of Crystal Growth
·
OSTI ID:1328038
+7 more